Biography:

Dr. Marina Antoniou

Associate Professor - Reader, University of Warwick

Dr Marina Antoniou is an Associate Professor- Reader at the University of Warwick. She holds a PhD, an MEng and BA from the University of Cambridge (Trinity College). She has been the holder of several highly competitive research fellowships and grants including the Royal Society Research Fellowship 2017 (SiC Power Devices for Smart Grid Systems), a Junior Research Fellowship (Selwyn College) and an Early Career EPSRC Centre for Power Electronics award, all of which involved the design and development of SiC or Si high power devices. Marina is the Chair of the IEEE Electron Devices Society, Power Devices & ICs Committee (2022-2023), having previously served as committee member (2020-2021). Marina is also an Associate Editor for the IEEE Transactions of Electron Devices,  Elsevier Power Electronic Devices and Components, Elsevier Microelectronics Reliability and the Royal Society Philosophical Transactions, the world's longest running science journal. She has previously served as a technical committee member for the IEDM (2020-2021), and the ISPSD (2015-2021), the leading international conferences in the area of electron and power semiconductor devices respectively. She is also an Executive Committee member of the IET’s PEMD Technical Network (TN).

Abstract:

Power devices are the fundamental building blocks of any power electronic system providing an interface between electrical systems or enabling the control of power flow. For decades, Silicon has been dominating the field however, it is now widely recognized that the real breakthrough in power electronics can be obtained by employing Wide Bandgap semiconductor devices. Silicon Carbide (SiC) is a very promising material for high voltage electronics (above 1.2 kV); at the R&D level, SiC devices have been shown to offer considerable reduction in size (at least 10 times smaller) for equal performance in terms of voltage and on-resistance rating. Given its larger bandgap, SiC is more robust at higher temperatures than Si, therefore the combination of area reduction and lower cooling requirements translate to smaller, lighter and more cost-efficient power conversion system solutions. In this lecture the state-of-the-art in Si IGBTs and SiC MOSFETs structures will be presented and discussed.